Abstract

Hgl-x Cd, Te is extensively used today as a versatile infrared d etector m aterial with increasing importance in the fabrication of focal plane arrays. erties are investigated using n ondestructive SAW technique. The transverse acoustoelectric voltage (TAV) is monitored across the Hgl-x Cd, Te sample which is placed in proximity of a LiNbOj delay line. TAV is developed due to the nonlinear interaction between the electric field accompanying SAW, and the free carriers near the Hgl-x Cd, Te surface. Contactless TAV and surface photovoltage spectroscopy are performed to determine the bandgap and thus the a lloy composition ( x) of Hgl-x Cd, Te. In this work Hgl-x Cd, Te electronic prop

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