Abstract
Depth profiling by secondary ion mass spectrometry (SIMS) has been performed on SiGe superlattice structures with various period lengths using Cs + ions. 2 nm structures could be clearly resolved. Transient effects were studied using 30 nm structures. A transition depth of 4 nm has been observed in the Ge signal with 1 keV Cs ions at 45° incidence together with a pronounced dependence of the secondary ion yield on the Ge concentration.
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