Abstract
ZnO:Er thin films were deposited on c-plane sapphire substrates by rf magnetron sputtering and annealed at 700 °C under air and H 2 atmospheres for the luminescent improvement. The effects of sputtering parameters and the annealing conditions on visible and 1.54 μm IR emissions were investigated. Structural and luminescent properties strongly depended on the deposition conditions and annealing atmospheres. By tuning the excitation wavelength, ZnO:Er thin films exhibited a strong emission band at around 465 nm and a weak emission at 525 nm originated from the energy transition of 4I 15/2– 4F 5/2 and 4I 15/2– 2H 11/2, respectively, while 1.54 μm IR emissions due to 4I 15/2– 4I 13/2 transition.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
