Characterization of Low-temperature SU-8 Negative Photoresist Processing for MEMS Applications

Abstract

In this paper, negative SU-8 photoresist processed at low temperature is characterized in terms of delamination. Based on a factorial designed experiment, 27 samples are fabricated, and the degree of delamination is measured for each. In addition, nine samples are fabricated for the purpose of verification. Employing the. neural network modeling technique, a process model is established, and response surfaces are generated to investigate degree of delamination associated with three process parameters: post exposure bake (PEB) temperature, PEB time, and exposure energy. From the response surfaces generated, two significant parameters associated with delamination are identified, and their effects on delamination are analyzed. Higher PEB temperature at a fixed PEB time results in a greater degree of delamination. In addition, a higher dose of exposure energy lowers the temperature at which the delamination begins and also results in a larger degree of delamination. These results identify acceptable ranges of the three process variables to avoid delamination of SU-8 film, which in turn might lead to potential defects in MEMS device fabrication.