Abstract
Silicon nitride films prepared on silicon by low pressure chemical vapour deposition (LPCVD) were characterized by electrical measurements (current-voltage and capacitance-voltage), Auger electron spectroscopy (AES) and reflection high energy electron diffraction (RHEED). The contact current versus contact field characteristics were interpreted in terms of the Fowler-Nordheim tunnelling of holes from silicon into silicon nitride, with the field of charged traps and the effect of changing the triangular shape of the barrier under steady state conditions taken into account and on the assumption of a Poole-Frenkel detrapping mechanism. AES data show that the LPCVD process yields stoichiometric Si 3N 4 films. RHEED data shows that films of thickness more than 10 nm are amorphous. Some crystalline structures of Si 3N 4 and SiO 2 are observed for thicknesses of less than 10 nm.
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