Abstract
Extended X-ray-Absorption Fine-Structure Spectroscopy (EXAFS) has been used to investigate the subtle local structural variations in plasma deposited semiconductors. Grazing incidence geometry EXAFS is a very effective tool to study the surface layers. Since EXAFS is an element specific sensitive local structural probe, it is advantageous to commonly used structural characterization techniques where there is no long-range crystalline order in material. EXAFS can provide crucial information deposition or post-deposition induced crystallographic structural modifications. The information extracted from EXAFS can be used as an important feedback for the thin film growth mechanisms. In this chapter the fundamental principles of EXAFS will be introduced. The data reduction and analyses with the structural model calculations will be discussed. The application of the EXAFS in plasma deposited silicon wafers and plasma-plume deposited high-k dielectric thin films will be presented.
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