Abstract
Sources of base-collector and base-emitter leakage current in a SiGeC-based heterojunction bipolar transistor (HBT) with a selectively grown and chemical–mechanical polished (CMP) collector are discussed. Transmission electron microscopy and electrical measurement have been applied to investigate the leakage current. It has been demonstrated that the edge-located defects generated by selective epitaxy process are the origin of the junction leakage.
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