Abstract
Lead zirconate titanate thin films have been deposited on platinized silicon substrate at low temperature by reactive facing target sputtering. The effects of substrate temperature, total gas pressure, sputtering ambience, input power and target composition on the phase composition of PZT thin film were investigated. By controlling the sputtering conditions, highly (111) oriented perovskite PZT thin films can be obtained, and the samples show ferroelectric properties.
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