Abstract
Lattice spacing and inclination around cells were investigated precisely for both undoped high etch-pit-densities (EPD) liquid-encapsulated Czochralski (LEC) GaAs crystal of the order of 104 cm−2 and undoped As-ambient LEC (As-LEC) crystal of low EPD of the order of 103 cm−2. Measurement of the lattice spacing and the inclination was carried out by the triple crystal method using a 100×100 μm2 size incident beam of high-intensity synchrotron radiation. It was revealed that the lattice spacing varied by almost Δd, on the order of 10−4 Å, due to the cellular structure of the high EPD crystal. In addition, the low EPD GaAs crystal grown by the As-LEC method showed considerably less variation in lattice spacing and inclination than the high EPD LEC GaAs crystal.
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