Abstract
Enregistrement, grâce a un diffractometre a double cristal, des diagrammes de rotation d'echantillons de Si non traites et traites thermiquement a 233, 500 et 1000°C. Diffusion diffuse importante pour les echantillons traites a 1000°C, due a des agregats d'hydrogene. Determination du rayon moyen des agregats
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More From: Zeitschrift für Kristallographie - Crystalline Materials
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