Abstract
Enregistrement, grâce a un diffractometre a double cristal, des diagrammes de rotation d'echantillons de Si non traites et traites thermiquement a 233, 500 et 1000°C. Diffusion diffuse importante pour les echantillons traites a 1000°C, due a des agregats d'hydrogene. Determination du rayon moyen des agregats
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Zeitschrift für Kristallographie - Crystalline Materials
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
