Abstract
Thick films of 0.7BiFeO3–0.3PbTiO3 have been deposited on sapphire substrates by tape casting and sintering at 1000°C. Films 20μm in thickness were released from the fabrication substrate using KrF pulsed laser radiation, and epoxy bonded to platinized silicon substrates in order to demonstrate the low-temperature integration possibilities of xBiFeO3–(1−x)PbTiO3 films. Despite structural changes at the laser-released film interface, strain-electric field loops are typical of a ferroelectric, showing an ultimate strain of 0.09%. X-ray diffraction and scanning electron microscopy observations suggest that interfacial melting and migration of Bi2O3 is involved in the lift-off process.
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