Abstract
The need for large, room-temperature gamma-ray spectrometers to be fabricated from a single crystalline section of a cadmium zinc telluride (CZT) boule was recently met by progress in crystal growth of high-resistivity material. The characterization of such large crystals provides us with an opportunity to better understand the detector physics and apply characterization techniques, which were difficult to implement and analyze on smaller crystals. In this study, metal-semiconductor-metal, planar-CZT detectors were fabricated from large (approximately 9 × 9 × 6 mm3), CZT single crystals. We have investigated the relationship between the results of the electric-field mapping via Pockels effect, photoconductivity data, and detector performance. Changes in the surface recombination and device characteristics showing departure from symmetry are caused and revealed by variations in the surface preparation.
Published Version
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