Characterization of Jet nebulizer spray pyrolysis coated MoS2 thin films and fabrication of p-Si/n-MoS2 junction diodes for optoelectronic application

Abstract

Inorganic two-dimensional materials are gradually becoming resources for modern electronic device manufacturing. Fascinate of 2D transition metal dicholgonides (TMDs) are particularly high. TMDS are very great potential for their characteristics and band gap structure in optoelectronic devices. In TMDs, 2D MoS2 is most researchable material due to its good performance and its adequacy of electronic and optoelectronic application. Here we demonstrate MoS2 thin film for various temperature such as 400, 450, 500, 550 °C via Jet Nebulizer Spray Pyrolysis (JNSP) technique for PN diode application. XRD pattern revealed that the polycrystalline nature of MoS2 films with hexagonal crystal structure. The elongated irregular rod-like structures were revealed through FESEM. Elemental confirmation studies of Mo and S were done through EDX. The MoS2 films deposited at 550 °C exhibit minimum band gap. The average conductivity values were found to be increased from 1.730 × 10−8 to 3.877 × 10−7 S/cm with substrate temperature. A positive photo conducting-nature of p-Si/n-MoS2 diode have been fabricated. Remarkably, the p-Si/n-MoS2 diode fabricated at 550 °C revealed minimum n values of 2.23.