Abstract
An advanced technique of Isolated Silicon Epitaxy (ISE) has been used to produce silicon-on-insulator (SOI) material of high quality. AUGER spectroscopy of ISE shows a chemically clean film with no heavy metal contamination. Structural studies by transmission electron microscopy and Nomarski optical microscopy on ISE SOI show only isolated threading dislocations yielding defect densities of (~3 X 105/cm2). Double crystal x-ray diffraction shows a FWHM of 44 arcsec in the isolated Si film. Material quality is discussed in detail.
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