Abstract
Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra doped p-layer below the n-p junction which provides signal amplification. The moderate gain of these sensors, together with the relatively thin active region, provides excellent timing performance for Minimum Ionizing Particles (MIPs). To mitigate the effect of pile-up during the High-Luminosity Large Hadron Collider (HL-LHC) era, both ATLAS and CMS experiments will install new detectors, the High-Granularity Timing Detector (HGTD) and the End-Cap Timing Layer (ETL), that rely on the LGAD technology. A full characterization of LGAD sensors fabricated by Centro Nacional de Microelectrónica (CNM), before and after neutron irradiation up to 1015 neq/cm2, is presented. Sensors produced in 100 mm Si-on-Si wafers and doped with boron and gallium, and also enriched with carbon, are studied. The results include their electrical characterization (I-V, C-V), bias voltage stability and performance studies with the Transient Current Technique (TCT) and a Sr-90 radioactive source setup.
Highlights
The Large Hadron Collider (LHC), located at CERN, is the world’s most powerful particle accelerator
The recently developed Low Gain Avalanche Detector (LGAD) [7] technology has been investigated by the LHC experiments as a solution to cope with the increased pile-up of the high-luminosity era
Both ATLAS and CMS experiments plan to install detectors based on LGADs in 2025, the High-Granularity Timing Detector (HGTD) [8] and the End-Cap Timing Layer (ETL) [9], respectively
Summary
The Large Hadron Collider (LHC), located at CERN, is the world’s most powerful particle accelerator. The recently developed Low Gain Avalanche Detector (LGAD) [7] technology has been investigated by the LHC experiments as a solution to cope with the increased pile-up of the high-luminosity era. An LGAD consists of a standard n-on-p planar silicon diode with the addition of a highly doped p-layer under the collection electrode (multiplication layer) The latter introduces an area with a strong electric field, resulting in the acceleration of drifting charge carriers towards the anode. A 0.7 × 0.7 mm gain layer and n-type collection electrode are centered within the pad region, encircled by a deeper secondary n-implant The latter, known as the Junction Termination Extension (JTE), mitigates high field values created by sharp geometrical structures at the edge and provides electrical isolation between the central region and the guard ring.
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