Characterization of ion tracks in PMMA for single ion lithography

Abstract

The ultimate resolution in ion beam lithography (IBL) can be achieved by etching tracks modified by the passage of a single ion impact which has a diameter in the order of 10 nm. For precise counting of single ions, a Si photodiode is used as a substrate onto which a PMMA film is spun. We have macroscopically investigated the sensitivity of PMMA using 3 MeV H and found that a deposited energy density of greater than 1 eV/nm 3 is required to remove the PMMA film for 60 s developing in a water:IPA 1:4 solution. From this sensitivity measurement we have determined that 8 MeV F, 71 MeV Cu and 88 MeV I ions should produce enough damage in a single ion strike to create a hole etched along the latent damage track. We have used AFM imaging to quantitatively characterise the hole diameter as a function of the incident ion and the developing time. It was found that for up to 8 min development in a water:IPA solution holes were created for the F, Cu and I ions. SEM imaging has also been used to verify the holes seen by AFM imaging.