Abstract
Auger electron spectroscopy (AES) and glow discharge optical spectroscopy (GDOS) have been successfully employed to profile the depth distributions of implanted Te, Cd, Mg and B in GaAs. In both analyses the depth distributions were profiled by sputtering with inert gas ions and the absolute concentrations obtained from both AES and GDOS were compared with theoretical ion range statistics and with electrical data. For implantation fluences of 10 15–10 16 cm -2 and energies of 60–120 keV, the range and magnitude compare favorably with the calculated values, except for the GDOS data on Mg. Some outdiffusion of Cd implants, possibly resulting from sample heating during implantation, was observed in the AES profiling. The effects of Si 3N 4 encapsulants by pyrolitic and plasma deposition techniques on the distribution of as-implanted Mg implants were examined by GDOS. Problems in applying AES and GDOS to characterize the implant profiles in GaAs are discussed and the two techniques will be compared.
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