Abstract
AbstractZirconium nitride (ZrN) coatings were prepared on Si (100) by single ion beam sputtering in N2 and Ar mixture at different substrate temperatures. Structure and morphology of the ZrN coatings were analyzed using X‐ray diffraction and atomic force microscopy. Rutherford backscattering technique was utilized for the determination of composition and thickness of the coatings. Electrical properties of the ZrN coatings were determined by four point‐ probe and Hall test. The results showed that the growth of ZrN with a preferred (111) orientation was achieved. The coating thickness depended on the substrate temperature and coating surface roughly remained smooth. The resistivity of the coatings varied from 1× 10‐3 to 14× 10‐3 Ω cm depending on the substrate temperature. A correlation between resistivity and charge carrier density was established to explain the electrical behavior of the coatings. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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