Abstract
Ion-beam-induced amorphous structures of silicon carbide (SiC) have been characterized by cross-sectional transmission electron microscopy. Single crystals of 6H–SiC with [0 0 0 1] orientation were irradiated with 180 keV oxygen ions at elevated temperature to a fluence of 1.4×10 18 O +/cm 2. It was found that a layered amorphous structure is formed inside the irradiated crystal. The intensities of halo patterns obtained by nano-beam electron diffraction techniques were analyzed quantitatively using imaging plates as a recording material. Pair distribution functions extracted by Fourier transforming nano-beam electron diffraction patterns indicated that the layered amorphous structure is due to compositional variations of silicon, carbon, and oxygen.
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