Characterization of iodoheptafluoropropane as a dielectric etchant. I. Process performance evaluation

Abstract

1- and 2-iodoheptafluoropropane were characterized extensively as potential replacement etchants for perfluorocompounds used in an oxide etch application. In the present study, via holes of critical dimension down to 0.35 μm were etched in an inductively coupled high density plasma tool. Oxide etch rate, mask and stop layer selectivities, and feature profile were among the principal metrics used to evaluate the performance of these compounds. A conventional (C3F8-based) etch process was used as a reference. Process behavior as a function of a number of variables—namely source power, bias power, etch gas flow, additive gas CH3F) flow, roof, wall, and chiller temperatures, and pressure was studied. While good etch rates and feature profiles were obtained, mask and stop layer selectivity was found to be limited. As a supplement to the experimental work, a set of ab initio quantum chemical calculations was undertaken to obtain enthalpies of dissociation for each of the bonds in the iodoheptafluoropropane molecules in order to better understand their dissociation pathways in plasma environments. Part I focuses on trends in process behavior as a function of the variables explored and discusses key mechanisms responsible for the observed effects. Parts II and III will focus on deposited film characterization and global warming emissions, respectively.