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Abstract
X-ray standing wave technique has been used to measure the kinetics of CoSi intermetallic phase growth in a-Si/Co/a-Si sandwich structure. The a-Si/Co/a-Si arrangement were placed into a waveguide structure formed by two Ta films. X-ray fluorescence and extended X-ray absorption fine structure analysis has been used in a combination with X-ray standing wave technique for depth profiling with sub-nanometer resolution of specimens annealed at 493K for different annealing time. The position and the thickness of the growing CoSi intermetallic phase have been monitored.
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