Abstract
It was reported that the reaction between Al and Ti takes place and Al 3Ti compound is formed during the annealing at 500°C. Annealing at higher temperatures, such as 550 and 600°C, the Al 3Ti compound transforms to Al 5Ti 2. It is believed that the Al 5Ti 2 is thermodynamically stable comparing with Al 3Ti. In the present research, the interfacial reactions in Al–0.5 wt.% Cu/Ti/SiO 2/Si structure have been investigated in the samples prepared by ionized metal plasma (IMP) and then annealed at various temperatures from 200 to 600°C for 30 min in Argon ambient. The results obtained by Rutherford backscattering spectroscopy and transmission electron microscopy show that there is a Ti layer (52 nm in thickness) between Al 5Ti 2 and SiO 2 and there is no formation of the ternary compound — Al x Ti y Si z , which is detrimental in the contact metallization layer. It indicates that the Ti layer deposited by IMP technique acts as a barrier to retard the reaction between Al 5Ti 2 and SiO 2 and consequentially protect the contact metallization layer.
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