Abstract
To implement a Ge channel in MOSFETs and to fulfill its potential, it is imperative to have a good understanding the natures of both metal/Ge and dielectric/Ge interfaces and to control them as precise as possible. It is well known that the Fermi-levels at any metal/Ge interfaces are pinned near the valence band edge of Ge. Recently, it has been reported that by inserting the GeOx and AlOx film into metal/Ge junction, the junction properties have been drastically changed from Schottky to Ohmic and Ohmic to Schottky characteristics on n-Ge and p-Ge, respectively. The interface properties remain a matter of research. In this work, we have characterized surface band bending and chemical bonding features of interfaces between chemically-cleaned or thermally-oxidized Ge and metals, and also examine their correlation with electrical properties.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
