Abstract
Surface photovoltage spectroscopy (SPS) has been used for direct measurements of the extrinsic surface states within the band gaps of p-InP (110) and (100) and n-GaAs(110) before and after Al and Au deposition. The observed metal-induced surface states are found to pin the Fermi level at monolayer coverages at Ev+0.83 eV for Au/p-InP(110), Ev+1.10 eV for Al/p-InP(110), Ec−0.94 eV for Au/n-GaAs(110), and Ec−0.80 eV for Al/n-GaAs(110). The Au/Al/p-InP(110) structure, studied for the first time using SPS provides evidence of strong Al clustering upon the InP surface. Chemically etched and UHV-cleaved p-InP surfaces and Au interfaces are also compared. The correlation between the observed energy state positions and electrically measured Schottky barrier heights is discussed.
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