Abstract
Using the Fourier spectrum of the surface morphology, the morphological instability occurring in the hetero-structure of InxGa1-xAsyP1-y (y<0.01) LPE layers on (100)GaAs substrates grown under supercooling of less than 1°C was studied in relation to the undersaturation ΔT and the growth time tg. The Fourier analysis enabled the instability to be investigated quantitatively, and it was found that the wave number for the rippled structure is distributed over a certain range. The average value of the wave number depends on the time as tg-1/3 and its power intensity depends strongly on ΔT as an exponential function. The Ostwald growth process suggests that this instability is due to diffusion of the solutes, decreasing the interfacial free energy due to the interphase surface tension.
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