Abstract
Post-treatment of the sensing film in tin oxide gas sensor arrays is widely used to improve the selectivity in gas recognition applications. This letter describes the characterization study of an integrated tin oxide gas sensor array chip in which the sensing films are modified using metal additives and ion implantations. Measurement results reveal that metal additives present a higher impact on the sensor sensitivity compared with ion implantations. The latter has no significant effect on the sensing properties. The drift is increased for the sensors with only ion implantation compared with the ones with metal additives. An array combining both post-treatment techniques is expected to improve the overall recognition performance.
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