Characterization of InN nanoparticles prepared by laser as photodetector

Abstract

Indium nitride (InN) nanoparticles (NPs) are a potentially important material for optoelectronic and high speed electronic devices. Using 1064 nm Nd:YAG laser, InN NPs suspension has been prepared by laser ablation of indium target submerged under ammonium hydroxide. FTIR determined the presence of In=N at 1114.8 cm[Formula: see text] symmetric stretching mode, and In–N bending vibration mode appears at 445.5 cm[Formula: see text]. X-ray diffraction (XRD) observed the peaks (101), (110), and (220) as a reflection formation cubic InN, with an average size of 2 nm. Scanning electron microscope (SEM) image shows that the NPs have a spherical shape with particle size in the range 2–20 nm. The transmission spectra of InN NPs suspension have the maximum optical transmission edge at 1378 nm with the band gap energy of 1.2 eV. The current–voltage characteristics of InN/Si heterojunction have a good rectifying property with a spectral responsivity of about 0.797 A/W at 750 nm wavelength.