Abstract
InGaN-based photovoltaic structures with different indium contents in InGaN active layer were investigated. The peak wavelengths of the photoluminescence (PL) spectra were measured at 464.3nm and 525.4nm for the blue-photovoltaic device (B-PV) and the green-photovoltaic device (G-PV) structures, respectively. The flat-band voltage was observed at −8V through the lower temperature (10K) bias-dependent PL measurement in B-PV device, but the flat-band voltage cannot be observed in G-PV device when the reverse bias was larger than −15V. The piezoelectric field (PZ) of the G-PV device was larger than the B-PV device through the bias-dependent PL measurement that was caused by the large lattice mismatch between the GaN and InGaN layers with high indium content. The small open-circuit voltage and the larger short-circuit current density (Jsc) were measured in the G-PV device compared with the B-PV device. The large Jsc value of the G-PV device was caused by the large photocurrent escaped from the PZ-field induced tilted-band structure in InGaN active layer. The InGaN-based PV devices with a large indium content and a lager PZ field had potential for the InGaN photovoltaic device applications.
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