Abstract
CdZnTe (CZT) crystals with a diameter of 52 mm was grown using low pressure Bridgman method and were indium-doped under Te-rich conditions. Results showed the Te concentration was almost the same in different part of the as-grown ingot. Through IR transmission, Te inclusion with regular triangular or circular shapes could be observed, and the size of Te inclusion was around 7 µm and the concentration was 1.5 105 cm-3 for the CZT in the middle part of the ingot. I-V characteristic showed a good linear behavior with a resistivity of ~1010 Ω•cm.
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