Abstract
The temperature dependence of ultrasonic attenuation is proposed to use for determining concentration of dopand in a diluted magnetic semiconductor. This non-destructive method can be used for the crystal in which attenuation is caused by relaxation in the Jahn―Teller system. Attenuation coefficient per the impurity ion β obtained at a fixed frequency was introduced as a parameter characterizing sensitivity of the method. This parameter was determined for a number of II―VI: 3d semiconductors: ZnSe:Ni 2+ , ZnTe:Ni 2+ , ZnSe:V 2+ , ZnSe:Cr 2+ , and ZnSe:Fe 2+ at 54 MHz. Anomalously large value of β = 23 × 10 ―18 dB cm 2 was found for Cr 2+ in ZnSe.
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