Abstract
AbstractWe have investigated the effect of annealing on hydrogen-related donors in crystals of InP using Hall effect, infrared absorption, and photorefractive gain measurements. Hydrogen is believed to be incorporated during growth, forming a donor complex around an indium vacancy with hydrogen saturating all four dangling bonds. By observing the local vibrational mode of the hydrogen complex using infrared absorption at 2316 cm−1 was possible to observe a decrease in the concentration of the hydrogen defect after annealing. In the undoped crystal, the disappearance of this defect is accompanied by a decrease in the free carrier concentration as measured by Hall effect. These changes are correlated with a decrease in the absorption due to Fe2+ centers, which form when donors are compensated by the neutral acceptor Fe3+. The existence of the hydrogen-related donor complex is further substantiated by photorefractive experiments using 1064nm irradiation on the iron doped samples. All of the measurements point to the role of hydrogen as a contributor to the net shallow donor concentration in InP crystals.
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