Abstract
GaN layers were deposited on (0001) sapphire byhydride vapour phase epitaxy (HVPE) and then extensivelycharacterized by Raman spectroscopy and atomic forcemicroscopy. It was observed that the GaN epilayers directly deposited on sapphire generally have rough surfaces, mostly madeof pyramids. The Raman scattering technique was found to be apowerful tool for quick and non-destructive assessment of thecrystallographic quality of HVPE GaN, although care must betaken in the spectra analysis as the surface morphology canaffect the spectra structure. The absence of forbidden modes indicate that the surface is planar and smooth and the materialis of good crystalline quality. A discussion on the observedred-shift of the A1(LO) mode frequency is presented.
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