Abstract
We report the characterization of thick completely relaxed InGaN layers grown using epitaxial lateral overgrowth (ELO) with a facet structure. ELO-InGaN layers were successfully grown on a stripe-patterned GaN template. The full width at half maximum of the X-ray rocking curve of ELO-InGaN on the InGaN templates was smaller than that of non-ELO InGaN. Because of the difficulty in improving the morphology of ELO-InGaN layers grown on patterned GaN templates, chemical and mechanical polishing (CMP) was performed to obtain a flat c-plane surface. The photoluminescence intensity of InGaN/GaN multiple quantum wells (MQWs) on the CMP-ELO-InGaN template was approximately two times stronger than that of MQWs on the GaN template. Furthermore, the peak wavelength of the MQWs on the CMP-ELO-InGaN template was longer than that on the GaN template because of the high In pulling effect.
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