Abstract
The IGBTs characteristics are examined in a single-pulse series resonant circuit under controlled temperature. The aim being to reach the highest possible switching frequency for IGBTs with ratings suitable for industrial use, it is found that both switching energy and on-state losses must be measured, as on-state losses also vary with frequency. It is also found that IGBTs, though having the same datasheet rating, can have properties depending on the manufacturers philosophy giving them totally different behavior at high frequencies. The time needed for the conductivity modulation mechanism to get into action is crucial, giving advantages to devices from manufacturers using low carrier lifetime and high bipolar emitter efficiency, such as Toshiba. The same datasheet ratings both in current, voltage and switching speed can be achieved with high carrier lifetime and low bipolar emitter efficiency, like Siemens devices, which in the resonant circuit will have their advantages under other modes of operation than Toshiba.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
