Abstract
In this paper, we consider ToF-SIMS as a tool to monitor interfacial SiO 2 at high- k/Si interfaces. By comparing TEM with ToF-SIMS profiles, a correlation between interfacial SiO 2 formation and SiO 2 − signal is drawn, leading to a methodology to measure interfacial SiO 2 layer thickness by means of ToF-SIMS. A strong preferential sputtering of oxygen in the high- k layer is observed, and this affects the possibility to determine interfacial SiO 2 layer thickness with ToF-SIMS. Interfacial effects occurring at the high- k/SiO 2/interface are discussed, and a simple qualitative model for the sputtering process at the interface is presented.
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