Abstract
Insulated Gate Bipolar Transistors are devices integrating a MOSFET and a bipolar transistor in a Darlington configuration. These devices have been studied before and after conduction stress. During high temperature operations (200°C) hot carriers can induce degradation in gate oxide, at silicon–oxide interface and into the base–emitter junction. The used IGBT SPICE sub-circuit can describe electrical aging in dynamic and static operation. The knowledge of which parameters are influenced during specific functional stress permits us to compensate for these changes or improve the implementation of the component in a circuit, as well as its use in field conditions.
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