Abstract
Two types of silicon carbides (single and polycrystals) irradiated by H + 2 ions (50 kV) were characterized using RBS, ERDA, XPS and ESR methods. The formation of an oriented second phase in single-crystal SiC was suggested by XRD measurements. It is found that hydrogen atoms implanted into a SiC lattice form CH bonds and the states of these CH bonds seem to be somewhat different from the ordinary CH bond.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
