Abstract
We have developed and characterized new detectors based on germanium (Ge) photodiodes to be used in the wavelength region between 900 and 1650 nm. The effects of spatial uniformity, temperature and low shunt resistance on the spectral responsivity measurements are studied. Our results for the spatial uniformities show improvements as compared with earlier studies. The spectral reflectances of a Ge photodiode and trap detector are also studied, and the trap reflectance is found to be less than 10−4 at wavelengths longer than 900 nm. The results of this study show that with careful use, the large area Ge photodiodes can offer a cost-effective alternative as compared with InGaAs photodiodes of similar diameters.
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