Abstract
We extract the carrier mobility-lifetime products for epitaxially grown GaSb and demonstrate the spectral response to gamma rays of a GaSb p–i–n photodiode with a 2-µm-thick absorption region. Under exposure from 55Fe and 241Am radioactive sources at 140 K, the photodiode exhibits full width at half maximum energy resolutions of 1.238 ± 0.028 and 1.789 ± 0.057 keV at 5.89 and 59.5 keV, respectively. We observe good linearity of the GaSb photodiode across a range of photon energies. The electronic noise and charge trapping noise are measured and shown to be the main components limiting the measured energy resolutions.
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