Abstract
Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01−1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are same as those of the disordered ones, essentially different from the ordered ones having two orientations towards [1−11] and [11−1] directions grown on (100) gallium arsenide substrates, which were previously reported. The bandgap at 300 K is 1.791 eV. The value is the smallest ever reported, to our knowledge. The high performance transverse stabilized AlGaInP laser diodes with strain compensated quantum well structure, which is developed in 1992, have been successfully obtained by controlling the misorientation angle and directions of GaAs substrates. The structure is applied to quantum dots laser diodes. This paper also describes the development history of the quantum well and the quantum dots laser diodes, and their future prospects.
Highlights
This paper describes the development history of the quantum well and the quantum dots laser diodes, and their future prospects
Aluminum gallium indium phosphide (AlGaInP) laser diodes, which are operated at continuous-wave (CW) under room temperature conditions, were been developed by three Japanese companies in 1986 [1,2,3]
It was found that the phenomena are generated by (01−1) micro-steps on the surface of gallium arsenide (GaAs) (100) substrates during the crystal growth processes using the metal organic chemical vapor deposition (MOCVD) method [4,5,6]
Summary
Aluminum gallium indium phosphide (AlGaInP) laser diodes, which are operated at continuous-wave (CW) under room temperature conditions, were been developed by three Japanese companies in 1986 [1,2,3]. Many companies and researchers proposed the ordering suppressing technologies such as low III/V ratio [7], high temperature growth [8,9], high growth rate [10], Zinc (Zn) doping and diffusion [11,12], introduction of (111)A and (111)B plane; (110) crystal plane [13,14] and misorientation substrates [15,16,17,18,19,20,21,22].
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
