Abstract
We report the improved characteristics of GaInN multiple-quantum-well (MQW) light-emitting diodes (LEDs) on Si substrate by an insertion of distributed Bragg reflector (DBR). The DBR-based GaInN MQW LED structures were grown on 2-in-diameter n-Si (1 1 1) substrates using a metalorganic chemical vapor deposition method. The number of Al 0.3Ga 0.7N/AlN pairs in DBR was changed from 1 to 5. No cracks were observed over the entire area of the DBR-based LED structure with less than 3-pair DBR. The light output power of the 3-pair DBR-based LED is approximately two times larger than that of the non-DBR-based LED.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
