Abstract
Abstract Low resistance (6ω/□) and highly transparent (83%) fluorine-doped SnO2 films were prepared by chemical vapour deposition and by optimizing the substrate temperature (about 350 °C), the oxygen flow rate (about 2.51 min-1) and the fluorine doping concentration (1.02 wt.%). The direct and indirect band gaps determined from the optical data were 4.29 eV and 2.74 eV respectively. X-ray diffraction patterns and scanning electron micrographs showed that the films have good crystallinity and do not show preferred orientation. These properties make the films suitable for application as top conducting layers in semiconductor/insulator/ semiconductor solar cells.
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