Abstract
Films of FexSiO (0<x<3) prepared by coevaporation of iron and silicon monoxide were characterized by electron spin resonance (ESR), X-ray diffractometry (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and electrical conductivity measurements. A ferromagnetic resonance (FMR) signal attributable to ferromagnetic iron grains was detected in as-deposited FexSiO (x>0.5) films. The room-temperature electrical conductivity increases with the Fe/Si ratio steeply at x<0.5 but gently at x>0.5. The formation of a metallic iron phase in as-deposited FexSiO (x>2) films and in annealed films was confirmed by XRD and TEM investigations. The critical Fe/Si ratio of 0.5 observed in ESR and conductivity measurements is associated with the granular structure growth. The granular iron growth in the as-deposited films is discussed.
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