Abstract
Ni55Mn23Ga22 ferromagnetic shape-memory thin films were deposited on silicon substrates and silicon single beam cantilever using radio frequency magnetron sputtering. Composition of thin films determined by Rutherford backscattering spectroscopy exhibit a deviation in comparison with those of the target (Ni50Mn25Ga25). Crystallographic structure of as-deposited Ni55Mn23Ga22 shows a crystalline 14M structure at room temperature, which is able to change with increase in deposition temperature and annealing temperature. Deflection measurements of the films deposited on Si single beam cantilever were investigated on different films deposited under various sputtering conditions. The results allow to select appropriate sputtering parameters to deposit Ni55Mn23Ga22 films with the minimum of the deflection.
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