Abstract
Ga 1−x Mn x N epilayers with a well-ordered ferromagnetic structure were grown on sapphire (0001) substrates, using the plasma enhanced molecular-beam epitaxy technique. Ga1−xMnxN films were found to be homogeneous, and to exhibit n-type conductivity and ferromagnetic ordering with a Curie temperature (TC) above room temperature. This was confirmed by transmission electron microscopy, x-ray diffraction, and by magnetometry using a superconducting quantum interference device. The high-temperature (T=300 K) photoluminescence (PL) spectra exhibited Mn-related free-to-acceptor pair transitions for Ga1−xMnxN layers with x≈0.2% and x≈0.6%. A Mn acceptor level of a Ga1−xMnxN layer with low Mn content was found to be located around 330 meV above the top of the valence band, suggesting that Mn-bound holes in group-III nitrides exhibit effective-masslike behavior. The excitation and temperature-dependent PL provided convincing evidence of a band-edge exciton to acceptor transition.
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