Characterization of Fenton reaction-based material removal on single crystal diamond surface

Abstract

Single Crystal Diamond (SCD), a new generation semiconductor material, is used in biochip substrates, sensors, and solid-state quantum emitters for quantum communication due to its excellent optoelectronic properties. However, its low processing efficiency arises from its extremely high hardness and chemical inertness. For efficient processing of SCD, an intensive analysis of its material removal mechanism is required. The material removal characteristics of the SCD surface under different processing conditions were studied using the method of wear scratch variation on SCD surface. The results show that the Fenton reaction could induce oxidation on the SCD surface and improve its material removal, which was more suitable for SCD processing than other reaction solution environments. The addition of diamond abrasive to the Fenton reaction solution resulted in a maximum SCD surface material removal amount of 586.43 μm2, which was higher than the Fenton reaction condition alone by a factor of 1.56, higher than the effect of diamond abrasive alone by a factor of 0.81, and higher than the combination of the two by a factor of 0.06. Among those factors that influence the Fenton reaction assisted SCD material removal, the mechanical removals of abrasive and tool rod accounted for 47.2 % and 8 %, respectively, while the synergy of chemical reaction with mechanical action by the abrasive and tool rod accounted for 44.8 %. The synergistic effect of chemical reaction and mechanical removal can improve the processing efficiency of SCD.