Abstract
The application of n-type GaN thin films (thickness of 4.4 μm) for measurement of the correlation spectrum of femtosecond laser pulses is demonstrated for the entire spectral region of the fundamental (720–820 nm) and second harmonic beams of a Ti:sapphire laser. Phase matching conditions are not required. The GaN thin film is stable and robust. Its wide band gap (3.4 eV) allows the characterization of femtosecond laser pulses over a wide wavelength range from 370 nm to 1.1 μm.
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