Abstract
This work analyses the dc response of InGaAs channel modulation-doped field-effect transistors, when varying temperature from 300 to 400 K. An analytical model for the intrinsic drain current is derived from previous work, carried out for a similar AlGaAs channel device, in order to show explicitly the temperature dependence. The extrinsic resistances are numerically evaluated and added in a straightforward form to the model. Experimental output characteristics at different temperatures of an InGaAs MODFET, in static operation, are compared with those offered by the resulting extrinsic model and numerical simulations. Computed relative errors are around 10%.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
