Abstract
NiFe/CoPt bilayer films were deposited onto Si wafers and the exchange coupling at the NiFe-CoPt interface was quantified by measuring the magnetization curve of the soft layer. By using CoPt layers of different thicknesses, different sputter etching times between CoPt and NiFe deposition steps and different annealing times of the bilayer, the exchange coupling field at the NiFe-CoPt interface was successfully altered. The preliminary data reported here might be seen as an initial step toward controlling and optimizing the interfacial exchange field that provides longitudinal bias for magnetoresistive heads with overlaid structures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
