Abstract
The evaporation of tellurium dioxide was carried out by resistive heating and electron-beam evaporation, and the resulting films were subsequently characterized using X-ray diffraction, infrared absorption spectroscopy and electron diffraction techniques. The infrared results of these films showed a marked deviation from the initial stoichiometry, indicating decomposition of the compound. From X-ray and electron diffraction data, it was found that the films had Te2O5 stoichiometry. Electron-beam evaporated films showed single crystal growth on a sodium chloride substrate, while those films obtained by resistive heating were wholly amorphous. Furthermore, when fabricated into capacitors, these films showed high capacitance and high dielectric strength (4.6×106V cm−1) suitable for passive devices.
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